ZXTP56060FDBQ-7
- Manufacturer Diodes Incorporated
- Part Number ZXTP56060FDBQ-7
- Description Bipolar Transistors - BJT 60V Dual PNP Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | U-DFN2020-6 |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 7 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000229 oz |
| Collector- Emitter Voltage VCEO Max | - 60 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | - |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | - 2 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Collector-Emitter Saturation Voltage | - 450 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | ZXTP56060FDBQ |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | - 60 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.47 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 50 |
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