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ZXTC6720MCTA

  • Manufacturer Diodes Incorporated
  • Part Number ZXTC6720MCTA
  • Description Bipolar Transistors - BJT Dual 80V NPN 70V PNP VCEO 80V Rsat 68mOhm
  • Category Bipolar Transistors - BJT
Specifications
Package DFN3020B-8
Min. Pack 1
Transistor Polarity NPN, PNP
Emitter- Base Voltage VEBO 7 V
Packaging
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 900 at 200 mA, 2 V
Collector- Emitter Voltage VCEO Max - 70 V, 80 V
Configuration Dual
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 160 MHz
Maximum DC Collector Current - 3 A, 5 A
RoHS Y
Continuous Collector Current - 2.5 A, 3.5 A
Collector-Emitter Saturation Voltage 15 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZXTC6720
Mounting Style SMD/SMT
Collector- Base Voltage VCBO - 70 V, 100 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1.5 W
DC Collector/Base Gain hfe Min 300 at 200 mA, 2 V

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