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ZXT12P12DXTA

  • Manufacturer Diodes Incorporated
  • Part Number ZXT12P12DXTA
  • Description Bipolar Transistors - BJT Dual 12V PNP
  • Category Bipolar Transistors - BJT
Specifications
Package MSOP-8
Packaging Reel
Min. Pack 1,000
Transistor Polarity PNP
Emitter- Base Voltage VEBO 7.5 V
Width 3.1 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 300 at 10 mA, 2 V
Unit Weight 0.004938 oz
Collector- Emitter Voltage VCEO Max - 12 V
Configuration Dual
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 85 MHz
Length 3.1 mm
Maximum DC Collector Current 3 A
RoHS Y
Continuous Collector Current - 3 A
Collector-Emitter Saturation Voltage - 150 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZXT12
Height 0.95 mm
Collector- Base Voltage VCBO - 20 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 870 mW
DC Collector/Base Gain hfe Min 300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3 A, 2 V, 20 at 12 A, 2 V

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