ZXT12P12DXTA
- Manufacturer Diodes Incorporated
- Part Number ZXT12P12DXTA
- Description Bipolar Transistors - BJT Dual 12V PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | MSOP-8 |
| Packaging | Reel |
| Min. Pack | 1,000 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | 7.5 V |
| Width | 3.1 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 300 at 10 mA, 2 V |
| Unit Weight | 0.004938 oz |
| Collector- Emitter Voltage VCEO Max | - 12 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 85 MHz |
| Length | 3.1 mm |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Continuous Collector Current | - 3 A |
| Collector-Emitter Saturation Voltage | - 150 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | ZXT12 |
| Height | 0.95 mm |
| Collector- Base Voltage VCBO | - 20 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 870 mW |
| DC Collector/Base Gain hfe Min | 300 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3 A, 2 V, 20 at 12 A, 2 V |
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