ZXMN3AMCTA
- Manufacturer Diodes Incorporated
- Part Number ZXMN3AMCTA
- Description MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS
- Category MOSFET
Specifications
| Package | DFN3020-B-8 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Qg - Gate Charge | 3.9 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 2.9 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 3.5 S |
| Id - Continuous Drain Current | 3.7 A |
| Rds On - Drain-Source Resistance | 120 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | ZXMN3 |
| Packaging | |
| Typical Turn-On Delay Time | 1.7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.45 W |
| Rise Time | 2.3 ns |
| Technology | Si |
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