ZXMHC10A07N8TC
- Manufacturer Diodes Incorporated
- Part Number ZXMHC10A07N8TC
- Description MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
- Category MOSFET
Specifications
| Package | SO-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 2.9 nC, 3.5 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 2.1 ns, 3.3 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.002610 oz |
| Number of Channels | 4 Channel |
| Configuration | Quad |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel, 2 P-Channel |
| Forward Transconductance - Min | 1.6 S, 1.2 S |
| Id - Continuous Drain Current | 1 A, 850 mA |
| Rds On - Drain-Source Resistance | 700 mOhms, 1.45 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 4.1 ns, 5.9 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | ZXMHC10 |
| Packaging | |
| Typical Turn-On Delay Time | 1.8 ns, 1.6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 870 mW |
| Rise Time | 1.5 ns, 2.1 ns |
| Technology | Si |
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