ZXMC4559DN8TC
- Manufacturer Diodes Incorporated
- Part Number ZXMC4559DN8TC
- Description MOSFET 60V TRENCH MOSFET 20V VGS P-Channel
- Category MOSFET
Specifications
| Package | SO-8 |
| Packaging | Reel |
| Min. Pack | 2,500 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 20.4 nC, 12.1 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 10.6 ns, 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.002610 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Forward Transconductance - Min | 10.2 S, 7.2 S |
| Id - Continuous Drain Current | 3.6 A, 2.6 A |
| Rds On - Drain-Source Resistance | 55 mOhms, 125 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 26.2 ns, 35 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | ZXMC4 |
| Typical Turn-On Delay Time | 3.5 ns, 3.5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 W |
| Rise Time | 4.1 ns, 4.1 ns |
| Technology | Si |
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