ZVN3310ASTZ
- Manufacturer Diodes Incorporated
- Part Number ZVN3310ASTZ
- Description MOSFET N-Chnl 100V
- Category MOSFET
Specifications
| Package | TO-92-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Width | 2.41 mm |
| Vgs - Gate-Source Voltage | 20 V |
| Type | FET |
| Fall Time | 7 ns |
| Mounting Style | Through Hole |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Brand | Diodes Incorporated |
| Unit Weight | 0.016000 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 200 mA |
| Length | 4.77 mm |
| Rds On - Drain-Source Resistance | 10 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | ZVN3310 |
| Height | 4.01 mm |
| Packaging | |
| Typical Turn-On Delay Time | 5 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 625 mW |
| Rise Time | 7 ns |
| Technology | Si |
Need pricing on ZVN3310ASTZ?
Tell us your quantity and target price. We reply the same business day.