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ZTX849

  • Manufacturer Diodes Incorporated
  • Part Number ZTX849
  • Description Bipolar Transistors - BJT NPN Big Chip SELine
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 6 V
Width 2.41 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
Unit Weight 0.016000 oz
Collector- Emitter Voltage VCEO Max 30 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 100 MHz
Length 4.77 mm
Maximum DC Collector Current 5 A
RoHS Y
Continuous Collector Current 5 A
Collector-Emitter Saturation Voltage 180 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZTX849
Height 4.01 mm
Collector- Base Voltage VCBO 80 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1.2 W

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