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ZTX792A

  • Manufacturer Diodes Incorporated
  • Part Number ZTX792A
  • Description Bipolar Transistors - BJT PNP Super E-Line
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity PNP
Emitter- Base Voltage VEBO - 5 V
Width 2.41 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 300 at 10 mA, 2 V
Unit Weight 0.016000 oz
Collector- Emitter Voltage VCEO Max - 70 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 100 MHz
Length 4.77 mm
Maximum DC Collector Current 2 A
RoHS Y
Continuous Collector Current - 2 A
Collector-Emitter Saturation Voltage - 0.5 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZTX792
Height 4.01 mm
Collector- Base Voltage VCBO - 75 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1000 mW
DC Collector/Base Gain hfe Min 300 at 10 mA, 2 V, 250 at 500 mA, 2 V, 200 at 1 A, 2 V

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