ZTX757
- Manufacturer Diodes Incorporated
- Part Number ZTX757
- Description Bipolar Transistors - BJT PNP Super E-Line
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Bulk |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 5 V |
| Width | 2.41 mm |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 50 at 100 mA, 5 V |
| Unit Weight | 0.016000 oz |
| Collector- Emitter Voltage VCEO Max | - 300 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 30 MHz |
| Length | 4.77 mm |
| Maximum DC Collector Current | 0.5 A |
| RoHS | Y |
| Continuous Collector Current | - 0.5 A |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | ZTX757 |
| Height | 4.01 mm |
| Collector- Base Voltage VCBO | - 300 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 W |
| DC Collector/Base Gain hfe Min | 50 at 100 mA, 5 V, 40 at 10 mA, 5 V |
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