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ZTX689B

  • Manufacturer Diodes Incorporated
  • Part Number ZTX689B
  • Description Bipolar Transistors - BJT NPN Super E-Line
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 2.41 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 500 at 100 mA, 2 V
Unit Weight 0.016000 oz
Collector- Emitter Voltage VCEO Max 20 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 150 MHz
Length 4.77 mm
Maximum DC Collector Current 3 A
RoHS Y
Continuous Collector Current 3 A
Collector-Emitter Saturation Voltage 0.5 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZTX689
Height 4.01 mm
Collector- Base Voltage VCBO 20 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1 W
DC Collector/Base Gain hfe Min 500 at 100 mA, 2 V, 400 at 2 A, 2 V, 150 at 6 A, 2 V

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