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ZTX688BSTZ

  • Manufacturer Diodes Incorporated
  • Part Number ZTX688BSTZ
  • Description Bipolar Transistors - BJT NPN Super E-Line
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 2.41 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
Unit Weight 0.016000 oz
Collector- Emitter Voltage VCEO Max 12 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 150 MHz
Length 4.77 mm
Maximum DC Collector Current 3 A
RoHS Y
Continuous Collector Current 3 A
Collector-Emitter Saturation Voltage 0.35 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZTX688
Height 4.01 mm
Collector- Base Voltage VCBO 12 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1 W

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