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ZTX618STZ

  • Manufacturer Diodes Incorporated
  • Part Number ZTX618STZ
  • Description Bipolar Transistors - BJT NPN High Gain
  • Category Bipolar Transistors - BJT
Specifications
Package TO-92-3
Packaging Bulk
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 2.41 mm
Mounting Style Through Hole
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 200 at 10 mA, 2 V
Unit Weight 0.016000 oz
Collector- Emitter Voltage VCEO Max 20 V
Configuration Single
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 140 MHz
Length 4.77 mm
Maximum DC Collector Current 3.5 A
RoHS Y
Continuous Collector Current 3.5 A
Collector-Emitter Saturation Voltage 210 mV
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZTX618
Height 4.01 mm
Collector- Base Voltage VCBO 20 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 1 W
DC Collector/Base Gain hfe Min 200 at 10 mA, 2 V, 300 at 200 mA, 2 V, 170 at 3 A, 2 V, 40 at 10 A, 2 V

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