ZTD09N50DE6QTA
- Manufacturer Diodes Incorporated
- Part Number ZTD09N50DE6QTA
- Description Bipolar Transistors - BJT 50V Dual NPN Low Sat 1A 7V Vebo
- Category Bipolar Transistors - BJT
Specifications
| Package | SOT-26-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 7 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| Unit Weight | 0.000529 oz |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 215 MHz |
| Qualification | AEC-Q101 |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 24 mV |
| Configuration | Dual |
| Subcategory | Transistors |
| Series | ZTD09N50 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 50 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 700 mW |
| DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V |
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