ZHB6792TA
- Manufacturer Diodes Incorporated
- Part Number ZHB6792TA
- Description Bipolar Transistors - BJT H-Bridge-70V
- Category Bipolar Transistors - BJT
Specifications
| Package | SM-8 |
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 3.7 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 500 |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Configuration | Quad |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 100 MHz, 150 MHz |
| Length | 6.7 mm |
| Maximum DC Collector Current | 1 A |
| RoHS | Y |
| Continuous Collector Current | 1 A |
| Collector-Emitter Saturation Voltage | - 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | ZHB67 |
| Height | 1.6 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 70 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2000 mW |
| DC Collector/Base Gain hfe Min | 500 at 100 mA, 2 V at NPN, 400 at 500 mA, 2 V at NPN, 150 at 1 A, 2 V at NPN, 300 at 10 mA, 2 V at PNP, 250 at 500 mA, 2 V at PNP, 200 at 1 A, 2 V at PNP |
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