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ZDT694TA

  • Manufacturer Diodes Incorporated
  • Part Number ZDT694TA
  • Description Bipolar Transistors - BJT Dual NPN Medium Power
  • Category Bipolar Transistors - BJT
Specifications
Package SM-8
Min. Pack 1
Transistor Polarity NPN
Emitter- Base Voltage VEBO 5 V
Width 3.7 mm
Mounting Style SMD/SMT
Product Category Bipolar Transistors - BJT
Brand Diodes Incorporated
DC Current Gain hFE Max 500
Collector- Emitter Voltage VCEO Max 120 V
Configuration Dual
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 130 MHz
Length 6.7 mm
Maximum DC Collector Current 0.5 A
RoHS Y
Collector-Emitter Saturation Voltage 0.5 V
Product Type BJTs - Bipolar Transistors
Subcategory Transistors
Series ZDT694
Height 1.6 mm
Packaging
Collector- Base Voltage VCBO 120 V
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 2.75 W
DC Collector/Base Gain hfe Min 500 at 100 mA, 2 V, 400 at 200 mA, 2 V, 150 at 400 mA, 2 V

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