ZDT694TA
- Manufacturer Diodes Incorporated
- Part Number ZDT694TA
- Description Bipolar Transistors - BJT Dual NPN Medium Power
- Category Bipolar Transistors - BJT
Specifications
| Package | SM-8 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 5 V |
| Width | 3.7 mm |
| Mounting Style | SMD/SMT |
| Product Category | Bipolar Transistors - BJT |
| Brand | Diodes Incorporated |
| DC Current Gain hFE Max | 500 |
| Collector- Emitter Voltage VCEO Max | 120 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 130 MHz |
| Length | 6.7 mm |
| Maximum DC Collector Current | 0.5 A |
| RoHS | Y |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | ZDT694 |
| Height | 1.6 mm |
| Packaging | |
| Collector- Base Voltage VCBO | 120 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2.75 W |
| DC Collector/Base Gain hfe Min | 500 at 100 mA, 2 V, 400 at 200 mA, 2 V, 150 at 400 mA, 2 V |
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