VT6Z1T2R
- Manufacturer ROHM Semiconductor
- Part Number VT6Z1T2R
- Description Bipolar Transistors - BJT NPN/PNP
- Category Bipolar Transistors - BJT
Specifications
| Package | VMT-6 |
| Min. Pack | 1 |
| Transistor Polarity | NPN, PNP |
| Emitter- Base Voltage VEBO | 5 V |
| Part # Aliases | VT6Z1 |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | ROHM Semiconductor |
| DC Current Gain hFE Max | 560 |
| Collector- Emitter Voltage VCEO Max | 20 V |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 350 MHz, 400 MHz |
| Maximum DC Collector Current | 400 mA, - 400 mA |
| RoHS | Y |
| Continuous Collector Current | 200 mA |
| Collector-Emitter Saturation Voltage | 120 mV |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | VT6Z1 |
| Mounting Style | SMD/SMT |
| Collector- Base Voltage VCBO | 20 V |
| Pd - Power Dissipation | 150 mW |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 120 |
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