VS-GT400TH60N
- Manufacturer Vishay Semiconductors
- Part Number VS-GT400TH60N
- Description IGBT Modules Output & SW Modules - DIAP IGBT
- Category IGBT Modules
Specifications
| Package | INT-A-PAK |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 530 A |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Brand | Vishay Semiconductors |
| Collector-Emitter Saturation Voltage | 1.6 V |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Mounting Style | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Pd - Power Dissipation | 1.6 kW |
| Configuration | Half Bridge |
| Maximum Operating Temperature | + 175 C |
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