VS-GT200TP065N
- Manufacturer Vishay Semiconductors
- Part Number VS-GT200TP065N
- Description IGBT Modules Output & SW Modules - IAP IGBT
- Category IGBT Modules
Specifications
| Package | INT-A-PAK |
| Min. Pack | 24 |
| Gate-Emitter Leakage Current | 600 nA |
| Continuous Collector Current at 25 C | 221 A |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Brand | Vishay Semiconductors |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Mounting Style | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 600 W |
| Configuration | Half Bridge |
| Maximum Operating Temperature | + 175 C |
Need pricing on VS-GT200TP065N?
Tell us your quantity and target price. We reply the same business day.