VS-GP400TD60S
- Manufacturer Vishay Semiconductors
- Part Number VS-GP400TD60S
- Description IGBT Transistors Ic 400A Vce(On)1.30V Half Brdge Trench PT
- Category IGBT Transistors
Specifications
| Package | DIAP |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 750 nA |
| Collector-Emitter Saturation Voltage | - |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Continuous Collector Current Ic Max | 758 A |
| Maximum Operating Temperature | + 150 C |
| Brand | Vishay Semiconductors |
| Pd - Power Dissipation | 1.563 kW |
| Continuous Collector Current at 25 C | 758 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Mounting Style | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual |
| Technology | Si |
| RoHS | Y |
Need pricing on VS-GP400TD60S?
Tell us your quantity and target price. We reply the same business day.