VS-GP300TD60S
- Manufacturer Vishay Semiconductors
- Part Number VS-GP300TD60S
- Description IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
- Category IGBT Transistors
Specifications
| Package | DIAP |
| Min. Pack | 1 |
| Gate-Emitter Leakage Current | +/- 500 nA |
| Collector-Emitter Saturation Voltage | - |
| Product Category | IGBT Transistors |
| Subcategory | IGBTs |
| Continuous Collector Current Ic Max | 580 A |
| Maximum Operating Temperature | + 150 C |
| Brand | Vishay Semiconductors |
| Pd - Power Dissipation | 1.136 kW |
| Continuous Collector Current at 25 C | 580 A |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Mounting Style | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Transistors |
| Minimum Operating Temperature | - 40 C |
| Configuration | Dual |
| Technology | Si |
| RoHS | Y |
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