VS-GB200TH120U
- Manufacturer Vishay Semiconductors
- Part Number VS-GB200TH120U
- Description IGBT Modules Output & SW Modules - DIAP IGBT
- Category IGBT Modules
Specifications
| Package | INT-A-PAK |
| Min. Pack | 12 |
| Gate-Emitter Leakage Current | 400 nA |
| Continuous Collector Current at 25 C | 330 A |
| Product Category | IGBT Modules |
| Subcategory | IGBTs |
| Brand | Vishay Semiconductors |
| Collector-Emitter Saturation Voltage | 3.1 V |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Mounting Style | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V |
| Product Type | IGBT Modules |
| Pd - Power Dissipation | 1.316 kW |
| Configuration | Half Bridge |
| Maximum Operating Temperature | + 150 C |
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