US6M2TR
- Manufacturer ROHM Semiconductor
- Part Number US6M2TR
- Description MOSFET N+P 20V 1.5A/1A
- Category MOSFET
Specifications
| Package | SOT-363T-6 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 20 V, 30 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 700 mV, 500 mV |
| Width | 1.7 mm |
| Qg - Gate Charge | 1.6 nC, 2.1 nC |
| Vgs - Gate-Source Voltage | 4.5 V |
| Part # Aliases | US6M2 |
| Type | MOSFET |
| Fall Time | 6 ns, 10 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.000265 oz |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel MOSFET, 1 P-Channel MOSFET |
| Id - Continuous Drain Current | 1 A, 1.5 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 240 mOhms, 390 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 15 ns, 25 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | US6M2 |
| Height | 0.77 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns, 9 ns |
| Pd - Power Dissipation | 1 W |
| Rise Time | 9 ns, 8 ns |
| Technology | Si |
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