US5U3TR
- Manufacturer ROHM Semiconductor
- Part Number US5U3TR
- Description MOSFET 2.5V Drive N-Chan + Sch Barrier Diode
- Category MOSFET
Specifications
| Package | SOT-353T-5 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Width | 1.7 mm |
| Vgs - Gate-Source Voltage | 12 V |
| Part # Aliases | US5U3 |
| Fall Time | 6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Unit Weight | 0.000212 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 1.5 A |
| Length | 2 mm |
| Rds On - Drain-Source Resistance | 240 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 15 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | US5U3 |
| Height | 0.77 mm |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1 W |
| Rise Time | 9 ns |
| Technology | Si |
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