TTC012(Q)
- Manufacturer Toshiba
- Part Number TTC012(Q)
- Description Bipolar Transistors - BJT NPN PWR Amp Trans 2A IC 3A ICP 800V
- Category Bipolar Transistors - BJT
Specifications
| Packaging | Bulk |
| Min. Pack | 1 |
| Emitter- Base Voltage VEBO | 8 V |
| Collector-Emitter Saturation Voltage | 500 mV |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Subcategory | Transistors |
| Product Type | BJTs - Bipolar Transistors |
| Series | TTC012 |
| Maximum Operating Temperature | + 150 C |
| Brand | Toshiba |
| DC Current Gain hFE Max | 250 at 1 mA, 5 V |
| Collector- Emitter Voltage VCEO Max | 375 V |
| Pd - Power Dissipation | 1.1 W |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 800 V |
| Maximum DC Collector Current | 2 A |
| Configuration | Single |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 80 at 1 mA, 5 V |
| RoHS | Y |
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