TTA008B,Q
- Manufacturer Toshiba
- Part Number TTA008B,Q
- Description Bipolar Transistors - BJT PWR TRANS TO-126 PC=10W F=1M
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-126N-3 |
| Packaging | Tray |
| Min. Pack | 1 |
| Transistor Polarity | PNP |
| Emitter- Base Voltage VEBO | - 7 V |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Toshiba |
| DC Current Gain hFE Max | 200 |
| Collector- Emitter Voltage VCEO Max | - 80 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | - 4 A |
| RoHS | Y |
| Continuous Collector Current | - 2 A |
| Collector-Emitter Saturation Voltage | - 0.3 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Series | TTA008B |
| Collector- Base Voltage VCBO | - 80 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.5 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 100 |
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