TT8J2TR
- Manufacturer ROHM Semiconductor
- Part Number TT8J2TR
- Description MOSFET SW MOSFET MIDDLE PWR P CH -30V-2.5A
- Category MOSFET
Specifications
| Package | TSST-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Qg - Gate Charge | 4.8 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Part # Aliases | TT8J2 |
| Fall Time | 14 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | ROHM Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 P-Channel |
| Forward Transconductance - Min | 1.8 S |
| Id - Continuous Drain Current | 2.5 A |
| Rds On - Drain-Source Resistance | 60 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 35 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 7 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 1.25 W |
| Rise Time | 20 ns |
| Technology | Si |
Need pricing on TT8J2TR?
Tell us your quantity and target price. We reply the same business day.