TSM650N15CR RLG
- Manufacturer Taiwan Semiconductor
- Part Number TSM650N15CR RLG
- Description MOSFET 150V, 24A, Single N- Channel Power MOSFET
- Category MOSFET
Specifications
| Package | PDFN56-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 150 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 36 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 4.8 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 11 S |
| Id - Continuous Drain Current | 24 A |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19.4 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 9.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 96 W |
| Rise Time | 6.4 ns |
| Technology | Si |
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