TSM6502CR RLG
- Manufacturer Taiwan Semiconductor
- Part Number TSM6502CR RLG
- Description MOSFET N&P Channel Power MOSFET
- Category MOSFET
Specifications
| Package | PDFN56-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel, P-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 20.8 nC, 9.5 nC |
| Vgs - Gate-Source Voltage | 10 V, - 4.5 V |
| Fall Time | 18 ns, 44 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Id - Continuous Drain Current | 5.4 A, 4 A |
| Rds On - Drain-Source Resistance | 28 mOhms, 73 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 18 ns, 44 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 7.4 ns, 4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 40 W |
| Rise Time | 25 ns, 28 ns |
| Technology | Si |
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