TSM60NB190CI
- Manufacturer Taiwan Semiconductor
- Part Number TSM60NB190CI
- Description MOSFET 600V Power MOSFET Superjunction N-chan
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Tube |
| Min. Pack | 4,000 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 31 nC |
| Vgs - Gate-Source Voltage | 30 V |
| Fall Time | 21 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Id - Continuous Drain Current | 18 A |
| Rds On - Drain-Source Resistance | 170 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 95 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 36 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 33.8 W |
| Rise Time | 21 ns |
| Technology | Si |
Need pricing on TSM60NB190CI?
Tell us your quantity and target price. We reply the same business day.