TSM60N600CI
- Manufacturer Taiwan Semiconductor
- Part Number TSM60N600CI
- Description MOSFET Power MOSFET, N-CHAN 600V, 8A, 600mOhm
- Category MOSFET
Specifications
| Package | ITO-220-3 |
| Packaging | Tube |
| Min. Pack | 4,000 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 13 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Part # Aliases | C0G TSM60N600CI |
| Fall Time | 9 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 8 A |
| Rds On - Drain-Source Resistance | 490 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 40 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 21 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 32 W |
| Rise Time | 15 ns |
| Technology | Si |
Need pricing on TSM60N600CI?
Tell us your quantity and target price. We reply the same business day.