TSM5055DCR RLG
- Manufacturer Taiwan Semiconductor
- Part Number TSM5055DCR RLG
- Description MOSFET MOSFET, Dual, N-Ch Trench, 30V, 38A
- Category MOSFET
Specifications
| Packaging | Reel |
| Min. Pack | 5,000 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 9.3 nC, 49 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 14 ns, 49 ns |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | Asymmetric Dual N-Channel Power MOSFET |
| Forward Transconductance - Min | 27 S, 47 S |
| Id - Continuous Drain Current | 38 A, 107 A |
| Rds On - Drain-Source Resistance | 8.8 mOhms, 2.7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 8.2 ns, 34 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 4.8 ns, 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 30 W, 69 W |
| Rise Time | 65 ns, 79 ns |
| Technology | Si |
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