TSM4NB65CZ C0G
- Manufacturer Taiwan Semiconductor
- Part Number TSM4NB65CZ C0G
- Description MOSFET 650V 4AMP N-Channel Power MOSFET
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Packaging | Reel |
| Min. Pack | 8,000 |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
| Qg - Gate Charge | 13.46 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 19 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Unit Weight | 0.063493 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 2.6 S |
| Id - Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance | 2.7 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 30 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 11 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 70 W |
| Rise Time | 20 ns |
| Technology | Si |
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