TSM150NB04DCR RLG
- Manufacturer Taiwan Semiconductor
- Part Number TSM150NB04DCR RLG
- Description MOSFET Dual N-Chan Pwr MOSFET 40V 48A 15mu
- Category MOSFET
Specifications
| Package | PDFN56-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Qg - Gate Charge | 18 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 3 ns |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 2 Channel |
| Configuration | Dual |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 2 N-Channel |
| Forward Transconductance - Min | 32 S |
| Id - Continuous Drain Current | 38 A |
| Rds On - Drain-Source Resistance | 15 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 12 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Mounting Style | SMD/SMT |
| Typical Turn-On Delay Time | 6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 2 W, 40 W |
| Rise Time | 7 ns |
| Technology | Si |
Need pricing on TSM150NB04DCR RLG?
Tell us your quantity and target price. We reply the same business day.