TSM120N06LCP RLG
- Manufacturer Taiwan Semiconductor
- Part Number TSM120N06LCP RLG
- Description MOSFET 60V, 54A, Single N- Channel Power MOSFET
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Packaging | Reel |
| Min. Pack | 5,000 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Moisture Sensitive | Yes |
| Qg - Gate Charge | 37 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 6.6 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Unit Weight | 0.011993 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 40 S |
| Id - Continuous Drain Current | 70 A |
| Rds On - Drain-Source Resistance | 9.7 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25.6 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time | 6.4 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 125 W, 2.6 W |
| Rise Time | 13.4 ns |
| Technology | Si |
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