TSM088NA03CR RLG
- Manufacturer Taiwan Semiconductor
- Part Number TSM088NA03CR RLG
- Description MOSFET Power MOSFET, N-CHL, 30V, 61A, 8.8mOhm
- Category MOSFET
Specifications
| Package | PDFN56-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Qg - Gate Charge | 12.6 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 3.4 ns |
| Mounting Style | SMD/SMT |
| Product | Rectifiers |
| Product Category | MOSFET |
| Brand | Taiwan Semiconductor |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Forward Transconductance - Min | 45 S |
| Id - Continuous Drain Current | 61 A |
| Rds On - Drain-Source Resistance | 6.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 25.5 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Packaging | |
| Typical Turn-On Delay Time | 9.6 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 56 W |
| Rise Time | 4.5 ns |
| Technology | Si |
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