TSC5804DCH C5G
- Manufacturer Taiwan Semiconductor
- Part Number TSC5804DCH C5G
- Description Bipolar Transistors - BJT High voltage Fast Switching NPN Transistor with diode
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-251-3 |
| Packaging | Tube |
| Min. Pack | 15,000 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 15 V |
| Mounting Style | Through Hole |
| Product Category | Bipolar Transistors - BJT |
| Brand | Taiwan Semiconductor |
| DC Current Gain hFE Max | 100 |
| Unit Weight | 0.011993 oz |
| Collector- Emitter Voltage VCEO Max | 450 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Maximum DC Collector Current | 8 A |
| RoHS | Y |
| Continuous Collector Current | 5 A |
| Collector-Emitter Saturation Voltage | 0.5 V |
| Configuration | Single |
| Subcategory | Transistors |
| Collector- Base Voltage VCBO | 1050 V |
| Pd - Power Dissipation | 45 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 25 |
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