TSC136CZ C0G
- Manufacturer Taiwan Semiconductor
- Part Number TSC136CZ C0G
- Description Bipolar Transistors - BJT High voltage NPN Transistor
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-220-3 |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 9 V |
| Packaging | |
| Product Category | Bipolar Transistors - BJT |
| Brand | Taiwan Semiconductor |
| DC Current Gain hFE Max | 30 |
| Unit Weight | 0.063493 oz |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Product Type | BJTs - Bipolar Transistors |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 4 MHz |
| Maximum DC Collector Current | 3 A |
| RoHS | Y |
| Continuous Collector Current | 3 A |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 700 V |
| Pd - Power Dissipation | 60 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 4 |
Need pricing on TSC136CZ C0G?
Tell us your quantity and target price. We reply the same business day.