TS13002ACT A3G
- Manufacturer Taiwan Semiconductor
- Part Number TS13002ACT A3G
- Description Bipolar Transistors - BJT NPN 700V 0.3A High Voltage/Speed
- Category Bipolar Transistors - BJT
Specifications
| Package | TO-92-3 |
| Packaging | Ammo Pack |
| Min. Pack | 1 |
| Transistor Polarity | NPN |
| Emitter- Base Voltage VEBO | 9 V |
| Product Category | Bipolar Transistors - BJT |
| Brand | Taiwan Semiconductor |
| DC Current Gain hFE Max | 24 |
| Collector- Emitter Voltage VCEO Max | 400 V |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Gain Bandwidth Product fT | 4 MHz |
| Maximum DC Collector Current | 0.3 A |
| RoHS | Y |
| Continuous Collector Current | 0.3 A |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Product Type | BJTs - Bipolar Transistors |
| Subcategory | Transistors |
| Mounting Style | Through Hole |
| Collector- Base Voltage VCBO | 700 V |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 0.6 W |
| Technology | Si |
| DC Collector/Base Gain hfe Min | 12 |
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