TPW2R508NH,L1Q
- Manufacturer Toshiba
- Part Number TPW2R508NH,L1Q
- Description MOSFET X35 Pb-F POWER MOSFET TRANSISTOR DOSP-ADV PD=142W F=1MHZ
- Category MOSFET
Specifications
| Package | DSOP-8 |
| Packaging | Reel |
| Min. Pack | 5,000 |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Qg - Gate Charge | 72 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 15 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 170 A |
| Rds On - Drain-Source Resistance | 2.5 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 56 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TPW2R508NH |
| Typical Turn-On Delay Time | 30 ns |
| Pd - Power Dissipation | 142 W |
| Rise Time | 11 ns |
| Technology | Si |
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