TPN2010FNH,L1Q
- Manufacturer Toshiba
- Part Number TPN2010FNH,L1Q
- Description MOSFET UMOSVIII 250V 200m (VGS=10V) TSON-ADV
- Category MOSFET
Specifications
| Package | TSON-Advance-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 3.1 mm |
| Qg - Gate Charge | 7 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 4.5 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Configuration | Triple |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 9.9 A |
| Length | 3.1 mm |
| Rds On - Drain-Source Resistance | 168 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 19 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TPN2010FNH |
| Height | 0.85 mm |
| Packaging | |
| Typical Turn-On Delay Time | 14 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 39 W |
| Rise Time | 5.2 ns |
| Technology | Si |
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