TPH6R30ANL,L1Q
- Manufacturer Toshiba
- Part Number TPH6R30ANL,L1Q
- Description MOSFET U-MOSVIII-H 100V 66A 55nC MOSFET
- Category MOSFET
Specifications
| Package | SOP-Advance-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 55 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 12 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 66 A |
| Rds On - Drain-Source Resistance | 5.1 mOhms |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 58 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TPH6R30ANL |
| Packaging | |
| Typical Turn-On Delay Time | 18 ns |
| Minimum Operating Temperature | - |
| Pd - Power Dissipation | 54 W |
| Rise Time | 7 ns |
| Technology | Si |
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