TPH6400ENH,L1Q
- Manufacturer Toshiba
- Part Number TPH6400ENH,L1Q
- Description MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V
- Category MOSFET
Specifications
| Package | SOP-Advance-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 5 mm |
| Qg - Gate Charge | 11.2 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.030018 oz |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 13 A |
| Length | 5 mm |
| Rds On - Drain-Source Resistance | 54 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TPH6400ENH |
| Height | 0.95 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 57 W |
| Technology | Si |
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