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TPH5900CNH,L1Q

  • Manufacturer Toshiba
  • Part Number TPH5900CNH,L1Q
  • Description MOSFET UMOSVIII 150V 64mOhm (VGS=10V) SOP-ADV
  • Category MOSFET
Specifications
Package SOP-Advance-8
Min. Pack 1
Vds - Drain-Source Breakdown Voltage 150 V
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 4 V
Width 5 mm
Qg - Gate Charge 7 nC
Vgs - Gate-Source Voltage 20 V
Fall Time 4.5 ns
Mounting Style SMD/SMT
Product Category MOSFET
Brand Toshiba
Unit Weight 0.030018 oz
Number of Channels 1 Channel
Tradename U-MOSVIII-H
Configuration Triple
Maximum Operating Temperature + 150 C
Transistor Type 1 N-Channel
Id - Continuous Drain Current 18 A
Length 5 mm
Rds On - Drain-Source Resistance 50 mOhms
RoHS Y
Product Type MOSFET
Typical Turn-Off Delay Time 19 ns
Subcategory MOSFETs
Channel Mode Enhancement
Series TPH5900CNH
Height 0.95 mm
Packaging
Typical Turn-On Delay Time 14 ns
Minimum Operating Temperature - 55 C
Pd - Power Dissipation 42 W
Rise Time 5.2 ns
Technology Si

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