TPH2R506PL,L1Q
- Manufacturer Toshiba
- Part Number TPH2R506PL,L1Q
- Description MOSFET N-Ch 60V 4180pF 60nC 160A 132W
- Category MOSFET
Specifications
| Package | SOP-Advance-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Width | 5 mm |
| Qg - Gate Charge | 60 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 13 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSIX-H |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 160 A |
| Length | 5 mm |
| Rds On - Drain-Source Resistance | 1.9 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 39 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Height | 0.95 mm |
| Packaging | |
| Typical Turn-On Delay Time | 16 ns |
| Pd - Power Dissipation | 132 W |
| Rise Time | 7.1 ns |
| Technology | Si |
Need pricing on TPH2R506PL,L1Q?
Tell us your quantity and target price. We reply the same business day.