TPH1R403NL,L1Q
- Manufacturer Toshiba
- Part Number TPH1R403NL,L1Q
- Description MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
- Category MOSFET
Specifications
| Package | SOP-Advance-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V |
| Width | 5 mm |
| Qg - Gate Charge | 46 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.030018 oz |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVIII-H |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 60 A |
| Length | 5 mm |
| Rds On - Drain-Source Resistance | 1.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TPH1R403NL |
| Height | 0.95 mm |
| Packaging | |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 64 W |
| Technology | Si |
Need pricing on TPH1R403NL,L1Q?
Tell us your quantity and target price. We reply the same business day.