TPCC8105,L1Q
- Manufacturer Toshiba
- Part Number TPCC8105,L1Q
- Description MOSFET PWR MOSFET PD=30W F=1MHZ
- Category MOSFET
Specifications
| Package | TSON-Advance-8 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Transistor Polarity | P-Channel |
| Vgs th - Gate-Source Threshold Voltage | - 0.8 V |
| Qg - Gate Charge | 76 nC |
| Vgs - Gate-Source Voltage | - 25V, 20 V |
| Fall Time | 110 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | U-MOSVI |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 P-Channel |
| Id - Continuous Drain Current | 23 A |
| Rds On - Drain-Source Resistance | 10.4 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 330 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TPCC8105 |
| Packaging | |
| Typical Turn-On Delay Time | 14 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 30 W |
| Rise Time | 8 ns |
| Technology | Si |
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