TK8A25DA,S4X
- Manufacturer Toshiba
- Part Number TK8A25DA,S4X
- Description MOSFET PWR MOSFET PD=30W F=1MHZ
- Category MOSFET
Specifications
| Package | TO-220SIS-3 |
| Packaging | Tube |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Qg - Gate Charge | 16 nC |
| Vgs - Gate-Source Voltage | 20 V |
| Fall Time | 16 ns |
| Mounting Style | Through Hole |
| Product Category | MOSFET |
| Brand | Toshiba |
| Number of Channels | 1 Channel |
| Tradename | MOSVII |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 7.5 A |
| Rds On - Drain-Source Resistance | 500 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 66 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK8A25DA |
| Typical Turn-On Delay Time | 32 ns |
| Minimum Operating Temperature | - 55 C |
| Pd - Power Dissipation | 30 W |
| Rise Time | 28 ns |
| Technology | Si |
Need pricing on TK8A25DA,S4X?
Tell us your quantity and target price. We reply the same business day.