TK6P60W,RVQ
- Manufacturer Toshiba
- Part Number TK6P60W,RVQ
- Description MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC
- Category MOSFET
Specifications
| Package | TO-252-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Width | 5.5 mm |
| Qg - Gate Charge | 12 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 7 ns |
| Mounting Style | SMD/SMT |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.139332 oz |
| Number of Channels | 1 Channel |
| Tradename | DTMOSIV |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 6.2 A |
| Length | 6.5 mm |
| Rds On - Drain-Source Resistance | 820 mOhms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 55 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK6P60W |
| Height | 2.3 mm |
| Packaging | |
| Typical Turn-On Delay Time | 40 ns |
| Pd - Power Dissipation | 60 W |
| Rise Time | 18 ns |
| Technology | Si |
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