TK6A60D(STA4,Q,M)
- Manufacturer Toshiba
- Part Number TK6A60D(STA4,Q,M)
- Description MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm
- Category MOSFET
Specifications
| Package | TO-220-3 |
| Min. Pack | 1 |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Transistor Polarity | N-Channel |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Width | 4.5 mm |
| Qg - Gate Charge | 16 nC |
| Vgs - Gate-Source Voltage | 10 V |
| Fall Time | 12 ns |
| Product Category | MOSFET |
| Brand | Toshiba |
| Unit Weight | 0.211644 oz |
| Number of Channels | 1 Channel |
| Configuration | Single |
| Maximum Operating Temperature | + 150 C |
| Transistor Type | 1 N-Channel |
| Id - Continuous Drain Current | 6 A |
| Length | 10 mm |
| Rds On - Drain-Source Resistance | 1.25 Ohms |
| RoHS | Y |
| Product Type | MOSFET |
| Typical Turn-Off Delay Time | 60 ns |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Series | TK6A60D |
| Height | 15 mm |
| Mounting Style | Through Hole |
| Typical Turn-On Delay Time | 40 ns |
| Pd - Power Dissipation | 40 W |
| Rise Time | 20 ns |
| Technology | Si |
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